High-Voltage (8.5 kV) Asymmetric IGCT for MVD and HVDC Applications

This paper, presents the design and experimental electrical performance of the newly developed high-voltage (8.5 kV) Asymmetric Integrated Gate-Commutated Thyristor (A-IGCT) together with the 8.5 kV Fast Recovery Diode (FRD). The devices are optimized to be used in low switching frequency (e.g., <150 Hz) applications for dc-link voltages of up to 5.3 kV. Also, it presents system level simulations using Modular Multi-level Converter (MMC) topology for High-Voltage Direct Current (HVDC) systems demonstrating the benefits of high-voltage devices and their ability to conduct high currents in such applications. Furthermore, it presents the system level simulations using 3-Level Neutral Point Clamp (3L-NPC) topology with high-voltage devices for Medium Voltage Drive (MVD) applications demanding higher power with output voltages in the range of 6.0-6.9 kV
rms
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