GaN HEMT with a Surface Superjunction with Low-doped Zones

Conventional lateral surface superjunction in GaN HEMTs has the problems caused by the high electric field peaks at the P-type strips’ edges. In view of this, we report a novel lateral superjunction structure with some low-doped zones at the end of the P-strips. Based on the GaN HEMTs with a 15$\mu$m drift region, the comparison between our superjunction and a conventional lateral surface superjunction has been done. The results show that the breakdown voltage of the device with novel superjunction is 1770V, which is significantly higher than that of the device for comparison, 671V. It is also observed that the two devices have almost the same on-resistance and parasitic capacitance.