Molybdenum Telluride Based Flexible Ambipolar Transistor on Polyimide

Two-dimensional transition metal dichalcogenides (TMDC) have garnered significant interest for high-performance flexible electronics, owing to their remarkable electrical properties and exceptional mechanical robustness. However, conventional aggressive fabrication processes could introduce defects at the metal-semiconductor interface and lead to degradation of device performance. Addressing these challenges necessitates seamless integration of metal and semiconductor. In this study, we present a state-of-the-art approach for fabricating a flexible transistor based on few-layered $MoTe_{2}$ on polyimide substrate. The stacking of metal-insulator-semiconductor layers inside the device was achieved using a universal metal transfer integration strategy, coupled with a novel thermocompression transfer technique. Our flexible transistor exhibited ambipolar behavior with a hole mobility of $\mu_{FE,p}\approx 3.5cm^{2}/Vs$. Moreover, a comprehensive electrical characterization under bending conditions revealed the remarkable mechanical stability of our device, even at a bending radius as low as $6mm$. These findings show the potential of the transistors constructed using our techniques in flexible electronics, making them highly attractive candidates for low-power consumption logic applications.