Negative-Bias-Stress-Induced Current Instability in Quasi-2D Tellurium Field-Effect-Transistors

Quasi-2D Tellurium (Te), holds great promise for high performance p-type field-effect-transistor (p-FET) in the future thanks to its high mobility and good stability. To pursue a practical application, its electrical stability of Te FET is of great concern. In this work, p-FETs based on quasi-2D Te synthesized by chemical vapor deposition (CVD) have been fabricated and corresponding bias induced instability has also been investigated under different negative bias stress voltage and stress time. Taking into consideration of the coupling effect of water/oxygen ionization, hydrogen ion and internal traps, three common models are proposed to understand the possible underlying mechanisms for the current instability raised by negative bias stress.