Efficient Implementation of Complete Reconfigurable Boolean Logic Primitives Based on Memristors

Logic-in-memory (LIM) computing based on memristors is considered as a promising non von Neumann computing paradigm. In this letter, a scheme to combine resistance-resistance (R–R) and voltage-resistance (V–R) logic gates to implement V/R-R sequential logic computing primitives composed of three memristors and one load resistor is demonstrated with TiN/Ti/$\mathrm{HfO}_{\mathrm{x}}$/TiN crossbar array. Arbitrary Boolean logic can be calculated within one cycle. The input logic signal is completely preserved and nondestructive during calculation. The diversity of gates made available by simply applying coordinated sequences of voltages to the memristor crossbar array significantly increases computing efficiency which one-bit full adder operation is possible with only five computing steps.