L-Vertical-shaped 3D Silicon Modulator for Efficient High-speed Communication

Doping profiles in the rib waveguide have been significant in silicon modulator design. As doping regulation in the cross-section reaches limitation, complex optimization in three dimensions has great potential to improve performance remarkably. This work proposes a modulator based on L-shaped and vertical junctions for high-speed communication. The results show that at -1V bias, the modulation efficiency of the design is 0.81 V$\cdot$ cm, while the loss is 14.3 dB/cm, and the bandwidth is over 45 GHz. This modulator is applicable for high-baud optical links and illustrates the great potential of 3D modulator design.