Fabrication and Characterization of CdS Quantum Dot-Sensitized Solar Cell Based on TiO2 Film by Successive Ionic Layer Adsorption and Reaction (SILAR) Technique

The most affordable alternatives to traditional silicon solar cells are quantum dot-sensitized solar cells. II-VI semiconductors compound have been widely used as Quantum Dot absorbers. Thin film of TiO
2
blocking layer was deposited onto FTO layer to prevent recombination of charges to achieve higher efficiency. A TiO
2
nanostructure-based cadmium sulfide quantum dot sensitive solar cell has been created. TiO
2
films degrade utilizing the SILAR method (Successive Ionic Layer Adsorption and Reaction). Enhancement the electrical conduction and reducing the recombination of charges between layer is a very strong tool for the characterization of photovoltaic devices. TiO
2
films were immersed into 0. 05M KC1 solution at 70 0C for different time. Efficiency was experimentally tested using current-voltage (I-V) in order to extract fabricated device properties. Solar cells with cadmium sulfide quantum dots are demonstrating a performance of 1.5-1.82%. Under AM1.5 illumination, a short circuit current density of 5.922 mA/c$\mathrm{m}^{2}$ and an open circuit voltage of around 0.613 V were attained.