Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT

Electroluminescence (EL) of a Schottky-type
${p}$
-GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack. This work revealed the unique bipolar carrier injection dynamics in the DC-HEMT under forward gate bias by analyzing the EL characteristics with bias and temperature dependence. Compared to a conventional single-channel (SC-) HEMT, the AlN insertion layer (AlN-ISL) in DC-HEMT plays the role of a blocking layer to the holes injected from gate to channel and creates a hole-storage effect that effectively suppresses the channel-to-gate electron spillover at forward gate bias.