Design and Analysis of Dual Material Double Gate Tunnel-Field Effect Transistor (DMDG-TFET) with Gate Oxide Stack

A Dual Material Double Gate TFET (DMDG-TFET) model with gate stacking has been presented for low power applications. It uses 2D layered material in the source region to improve the bandgap mechanism and, consequently, the likelihood of tunneling. In the current work, which also contributes to the characterization of the suggested source region, a layered Hafnium oxide material (HfO2) with a moderate bandgap value and low effective mass is utilized. The drain current expression is obtained by quantitatively integrating the band-to-band tunneling generation rate over the channel thickness. HfO2 has been placed on top of SiO2 to get a significant and influential gate oxide thickness, which reduces the OFF current (enhanced subthreshold conduction phenomenon) and provides an incredibly low subthreshold swing of 1.8 mV/Decade. Silvaco's ATLAS, a two-dimensional (2D) device simulator, was employed to characterize and model the device structure. The proposed device is put through a numerical simulation. The system provides ON-OFF transition profiling with a promising ratio. The performance of the HfO2/Si gate stacked TFET is promising for the possible implementation at the circuit level after the small signal behavior of the suggested TFET model has also been evaluated.