Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth” [Apr 20 doi: 10.1109/JQE.2020.2970745]

In the above article
[1]
, the affiliations were written as: The authors are with the State Key Laboratories of Transducer Technology, Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China (e-mail: mayingjie@mail.sitp.ac.cn; lixue@mail.sitp.ac.cn).