Account and Application of Orthogonal Direct Magnetic and Electric Fields in the Development of New Microwave Frequency-Converting Devices

A new method for finding the bulk conductivity of
$\mathrm{A}^{\text{III}}\mathrm{B}^{\mathrm{v}}$
type semiconductors is proposed, which determines their basic frequency and field properties and the possibility of selecting parameter values that ensure the operating mode of devices in a given frequency range. The analysis of physical processes in the bulks of such structures, under the orthogonal impact of strong electric and magnetic fields, identified new effects associated with the detected incident areas on drift and diffusion induction characteristics, and the possibility of using them to create active elements. The detected “bulk -diffusion detector effect” and “magnetic field control effect of the drift characteristic” may underlie the creation of a new type of frequency converters.