Spatial distribution of microwave device harmonic electrical variables through T-dependent TCAD simulations

TCAD simulations of electron devices operated in the periodic large-signal regime are implemented in the frequency domain, thus allowing extracting all internal physical variables, such as the carrier concentration and electric field, in terms of their harmonic content. Therefore, these simulation tools offer a unique insight into the device operating conditions typical of microwave applications, e.g. highlighting the regions of the device affecting each harmonic of the terminal currents. In particular, Conversion Green's Functions, allow for a simple and direct way to inspect the response of each harmonic to variations in the device operating condition, structure, material and technological parameters with respect to the nominal values. In this paper, we provide a discussion of the internal quantities for a silicon FinFET device, exploited into a power amplifier for small-cells transceiver applications at 70 GHz. The temperature dependent analysis highlights e.g. the impact of carrier mobility degradation in the FinFET access regions and of the inversion channel charge including DC, fundamental and harmonics of the drain current.