A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

To find the driving force of charge trapping effect of the Si ferroelectric field effect transistor (FeFET), we propose a physics-based model. This effect occurs at the interface of the ferroelectric (FE) layer and interlayer (IL) in FeFET with a metal/ferroelectric/interlayer/Si (MFIS) gate structure. In this model, we explain the charge trapping behavior by considering direct tunneling (DT), Fowler–Nordheim tunneling (FNT), and inelastic trap-assisted tunneling (TAT). Our model matches the experimental data well. Based on our model, we find that the charge trapping behavior is mainly determined by DT at the high electric field and by inelastic TAT at the low electric field. We evaluate the typical time of charge trapping and give guidelines for suppressing charge trapping behavior to improve the endurance of FeFET.