Exploring Capabilities of Maskless Lithography for Dual—Image Exposure in FO WLP

EVG's maskless exposure lithography enables 3D dual-image patterning of novel dielectrics replacing the cost consuming dual-damascene process in WLP. The pattern sizes <4 μm (bottom via) with layer thickness 8 μm were accomplished in this investigation. Unique features of LITHOSCALE® support variety of R&D designs, technology transfer to HVM and fast time-to-market of new designs in the growing semiconductor world.