High-Performance Amplifier Package Design for Heterogenous Integration on Si-interposer

The RF design for the wire bond and flip-chip Power Amplifier (PA) MMIC on the High Resistivity (HiR) Si-interposer are presented in this paper. The HiR Si-interposer is to support multiple off-the-shelf RF and Baseband ICs for complex advanced RF frontend modules using heterogeneous integration. A two-sided thermal cooling solution is adopted for this high-performance integration architecture. The high-power dissipation MMIC is integrated using flip-chip assembly so that the heat can be dissipated through the top heat spreader. For the other ICs, they are integrated using wire bond assembly so that their heat will be dissipated through the bottom HiR Si-interposer.