Metaconductor-Based High Signal Integrity Interconnects for 112 Gbps SerDes Interface with Channel Analysis

We present a frequency and time domain analysis of Copper/Cobalt metaconductor (Cu/Co-MC) based transmission lines/interconnects for 112 Gbps high-speed applications. The measurement results of the Cu/Co-MC based interconnects feature a 55.5 % series resistance reduction and more than 74 % improvement in eye-opening compared with the solid Cu counterpart under a four-level pulsed amplitude modulation (PAM-4) scheme. The thickness of the Cu/Co-MC has been optimized for 28 GHz applications and a 50 mm long low-loss differential stripline has been designed and their insertion loss, near-/far-end crosstalk have been studied. The Cu/Co-MC shows improved insertion loss and crosstalk performance. The insertion loss of the Cu counterpart is approximately 0.12 dB/mm while that of the Cu/Co-MC is approximately 0.07 dB/mm at 28 GHz. Also, the Cu/Co-MC shows a maximum 4.6 dB and 10 dB improvement on near- and far-end crosstalk over the Cu counterpart. It is envisioned that the Cu/Co-MC based interconnects will increase the integration density of the interconnects in packaging by 41 % while improving the signal integrity of the high-speed transceiver.