Simulation Analysis of an Interleaved Silicon Carbide (SiC) Full-Bridge Converter

Silicon carbide (SiC) switching devices have an enormous influence on power electronic systems, entitled to extraordinary outcomes attained in low switching and conduction losses. The research work exploration is to develop and analyze the interleaved SiC full-bridge converter. It is subjected to analyze the performance of silicon carbide (SiC) module-based converter design which can offer a power of 42kW. Power conversion is done between DC/AC by using a standard 1200V single-phase SiC module from Semikron [1]. The SiC-MOSFETs are controlled by an adequate galvanically isolated gate driver circuit. Several gate drivers' functionalities are added in the converter design for optimized performance and safe operation. The features include split turn-on/turn-off outputs, desaturation and active miller-clamp. The DC-link capacitors are designed to cancel the input ripple current and stabilizing the source voltage. The interleaving (180° phase-shift between the legs) helps to reduce ripple currents both, in the input capacitor as well as at the output. At the output coupled inductors are providing suppression of transverse currents between the interleaved legs. The coupled inductors help to reduce the size of the filter in the case of DC-DC or DC-AC grid-tie inverters.