Simulation Study of Stacked Oxide Layer NCFET for RF Applications

To validate the suitability for radiofrequency (RF) applications, the characteristics of the proposed Ga
2
O
3
based Negative Capacitance Field Effect Transistor (NCFET) with a stacked ferroelectric HfO
2
and Al
2
O
3
gate dielectrics is simulated and studied using TCAD simulation platform. The key Parameters used to investigate the proposed device’s RF performance include intrinsic capacitances (C
gs
& C
gd
), transconductance (g
m
) and the results attained for the proposed device is analyzed. The findings of this work recommends that the proposed Ga
2
O
3
based stacked NCFET design will be advantageous for successful device integration because it will offer benefits like a steep slope and reduced supply voltage operation for RF applications.