Single-Switch Discontinuous Current-Source Gate Driver With Voltage Boosting Capability and No Current Diversion

This article presents a novel single-switch discontinuous current-source gate driver (CSD)with voltage boosting capability appropriate for ultralow voltage applications. The power
mosfet
gate current using this CSD does not deviate during both turn-
on
and turn-
off
transitions. Thus, in comparison to the previous CSDs, the effective gate current is much higher and nearly constant during switching transitions, which would reduce both turn-
on
and turn-
off
transient intervals and consequently the switching losses. Other advantages of this CSD are low number of components, high
$C\frac{dv}{dt}$
immunity, and the ability to increase the gate-source voltage to more than the gate-drive source voltage, which reduces the drain-source
on
-resistance(
$\mathbf {R_{DS(on)}}$
). The power
mosfet
fast transition intervals and low
$\mathbf {R_{DS(on)}}$
have contributed to improved efficiency. The proposed CSD is analyzed and theoretical analysis is verified by the stimulation and experimental results at 1 MHz.