Novel Glass-Silicon Emitter Chip for Field Emission Applications

This work presents the design and fabrication of a novel emitter chip comprising a silicon electron source with pyramidal structures and a glass extraction electrode. The emitters were fabricated using a wafer dicing technique. The glass extraction electrode was manufactured by Laser Induced Deep Etching (LIDE), metallized, and bonded onto the silicon chip using laser-assisted bonding. Current-voltage experiments confirm the excellent performance of the diced emitters, highlighting their potential for a wide range of applications.