Investigation of Heavy-Ion Induced Single Event Effects for GaAs and GaN-based RF Amplifiers in Space Applications

In this paper the investigation of single event effects (SEE) of gallium-arsenide (GaAs) and gallium-nitride (GaN) radio frequency (RF) amplifiers under heavy-ion particle acceleration is presented to validate their performance and reliability in space applications. The paper provides technical insight of the GaAs and GaN devices under test (DUT) and the test method and test results are presented. All DUTs and samples showed no destructive SEEs for any test condition.