A Thru-Reflect-Series-Resistance (TRS) Calibration for Cryogenic Device Characterization in 40-nm CMOS Technology

This paper presents an on-wafer thru-reflect-series-resistance (TRS) VNA calibration in CMOS for device characterization at cryogenic temperatures. The algorithm resembles LRRM calibration while requiring only three calibration structures. The series-resistor standard is implemented using the polysilicon layer in the CMOS process, and its temperature dependency is characterized. We validate the calibration results using a 40-nm NMOS from DC–20 GHz using a cryogenic probe station down to 4K.