A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit

A temperature compensated G-Band low-noise amplifier (LNA) is fabricated in IHP’s 0.13-µm SiGe BiCMOS technology. A biasing circuit is proposed, which compensates the complementary to absolute temperature (CTAT) dependence of the gain through a proportional to temperature (PTAT) collector current that is generated with an on-chip and compact (0.0035 mm
²
) biasing circuit. Temperature stability is addressed without a penalty in the LNA, which shows a comparable measured performance from -20 °C to 80 °C to the State Of the Art measurements that are only offered at room temperature. The LNA is centered at 195 GHz with a 3 dB bandwidth of 25 GHz. The maximum nominal gain is 18.1 dB at room temperature and only shows a gain variation of ±1.1 dB from -20 °C to 80 °C. The minimum NF is 9 dB and has ±1.5 dB of variation in the temperature range.