GaN HEMT Modeling versus Bias Point and Gate Width

This paper focuses on the equivalent-circuit modelling of gallium-nitride (GaN) high electron-mobility transistors (HEMTs) on silicon carbide (SiC) substrate. The model is extracted from scattering (S-) parameters measurements by using the well-known “cold” approach. The extracted model is successfully validated by investigating three devices with different gate widths in a wide range of bias points over a broad frequency range spanning from 45 MHz up to 50 GHz.