Application of Commercial p-channel Power VDMOS Transistors as Dosimeters for Photon Ionizing Radiation

The experimental results of the threshold voltage shift as a function of absorbed radiation dose of gamma radiation for commercial p-channel power VDMOS transistors IRF9520 were presented. Transistors irradiation was performed for gate voltage 0, 1.25, 2.5, 3.75 and 5 V in order to examine the influence of this parameter on the response of these components. It was shown that increasing the radiation dose and voltage at the gate during irradiation leads to an increase in threshold voltage shift. This increase is a consequence of the increase oxide traps. After irradiation, the recovery of the irradiated transistors at room temperature without the presence of gate voltage was monitored. It was shown that during 14 days of recovery there is no significant change in the threshold voltage shift. Based on the obtained results, the possibility of using these components as ionizing radiation dosimeters was analysed.