Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition

Ferroelectric HfO
2
(Fe-HfO
2
) doped with Zr etc. is widely investigated for the metal-ferroelectrics-Si field-effect transistor (MFSFET) nonvolatile memory because of its Si compatibility [1], [2]. We have reported the MFSFET with ferroelectric nondoped HfO
2
(FeND-HfO2) to suppress the threshold voltage (V
TH
) variation and decrease the thermal budget for analog memory application [3]–[5]. Although the MFSFET with 5 nm-thick FeND-HfO
2
was realized, the plasma damage is necessary to be decreased during the Pt gate electrode deposition [6]. In this paper, we have investigated the V
TH
control of MFSFET utilizing Kr-plasma sputtering for Pt gate electrode deposition on 5 nm-thick FeND-HfO
2
.