Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si

Si surface orientation is one of the crucial factors to determine the performance of 3D-structured devices such as fin-, nanosheet-and vertical-field-effect transistors. We reveal that the crystallization annealing temperature, remnant polarization $(P_{r})$, and coercive field $(E_{c})$ of the ferroelectric HfZrO
x
stack on Si show strong surface orientation dependence. We evaluate HfZrO$_{x} -$ based FEFET on Si with different orientations for both memory and logic applications. Based on the findings, the impact of surface orientation in SOI FE FinFET is shown. Finally, we suggest a strategy for 3Dstructured FEFET with targeted applications.