Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V

By taking advantage of the extremely high dielectric constant $(\kappa)$ of 47, the Hf
0.2
Zr
0.8
O
2
gate stacks with ultralow EOT/CET of $0.62 / 0.87 \mathrm{~nm}$ are integrated into the 8 stacked high mobility Ge
0.95
Si
0.05
channels with low thermal budget $\left(\leq 450^{\circ} \mathrm{C}\right)$ to significantly enhance the IoN. The simulation of $\kappa$ vs $[\mathrm{Zr}]$ in HZO confirms that the $\kappa$ can be peaked at $[\mathrm{Zr}]=80 \%$. The 8 stacked Ge
0.95
Si
0.05
nanowires and nanosheets achieve the record $\mathrm{I}_{\mathrm{ON}}$ per footprint of $9200 \mu \mathrm{A} / \mu \mathrm{m}$ and the record $\mathrm{I}_{\mathrm{ON}}$ per stack of $360 \mu \mathrm{A}$ at $\mathrm{V}_{\mathrm{OV}}=\mathrm{V}_{\mathrm{DS}}=0.5 \mathrm{~V}$, respectively, among all $\mathrm{Si} / \mathrm{GeSi} / \mathrm{Ge} 3 \mathrm{D}$ nFETs. Moreover, the significant gate delay improvement by combining the extremely high-$\kappa$ gate stacks and the large floor number is confirmed by simulation.