2D Materials in the BEOL

2D materials, such as Transition Metal Dichalcogenides (TMDs), have potential for large impact in future technologies due to their inherent atomic thickness. Here, we present multiple applications of 2D materials in the Back End of Line (BEOL). First, we report various 300 mm BEOL compatible growth methods for 2D materials. We reveal the ultra-scaling of interconnect barriers with a 10 Å 2D BEOL barrier yielding comparable performance to 25 Å Tantalum (Ta). Furthermore, we present a novel BEOL passivation technique for an unstable film by encapsulating it with a 2D material. Lastly, with a 300 mm BEOL grown WSe
2
film, we report appreciable PMOS currents up to 15 μA/μm for future BEOL CMOS technologies.