Comprehensive 300 mm process for Silicon spin qubits with modular integration

We report a comprehensive 300 mm industrial silicon spin qubit integration process for large scale quantum processors. The process was designed to be modular to enable the identification and optimization of the key elements for qubit performance and upscaling. The devices can be fabricated on Si or SiGe substrates with PolySi or TiN metal for the gate electrodes. The modular approach is extended to qubit control structures enabling both ESR antennas and EDSR micromagnets. Various quantum dots and sensors, on both platforms, are measured in a dilution refrigerator at temperatures $\sim 10$ mK. Electrical characterization of the quantum dots demonstrates low disorder and excellent charge stability down to the last electron. Finally, we demonstrate coherent spin manipulation using an ESR antenna. These low-disorder, high performance qubits mark CMOS manufactured spin qubits as a mature platform for large scale quantum computing.