High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications

An innovative 3D stackable wing-shaped Via RRAM is firstly proposed, featuring logic embedded ultra-high memory density (>0.1Gb/mm²) and full compatibility with TSMC’s 16nm FinFET CMOS platform without extra mask and process steps. In this paper, the new backend Cu-layer stackable 3D RRAM cell structure, array operations, reliability, FinFET macro scalability are characterized and exhibiting the new 3D embedded RRAM is a very promising high density solution of high performance MCU in automotive and IoT applications.