3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

A 1500x I
LRS
/I
HRS
with a high cell current of ~100 nA/ cell (J = 83 A/cm
²
) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 10
⁹
cycles at |4V| and stable nonvolatile data retention > 10
⁴
sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.