Improved Radiation Hardness for Nanosheet FETs with Partial Bottom Dielectric Isolation

This work examined the impact of radiation on nanosheet FET (NSFET), and the results show that incorporating the partial bottom dielectric isolation (PDI) can significantly enhance the radiation hardness. The collected charge for NSFET with PDI is 55% to 82% lower than the conventional NSFET when heavy ion strikes from the top of the transistor (depends on striking position). In addition to investigating the radiation hardness of NSFETs, the susceptibility to single event transient (SET) and single event latch-up (SEL) effects have also been analyzed. Our findings reveal that the NSFET inverter with PDI exhibits superior performance, with a
$0.33\times$
lower output voltage drop compared to the conventional NSEFT inverter in SET tests, and remarkable resistance to SEL.