Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment

A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher
$\mathrm{I}_{\text{ON}}$
, lower
$\mathrm{I}_{\text{OFF}}$
, larger
$\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}$
, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in
$\text{SiGe}$
and interface traps or/and reversed tensile strain in Si.