Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

In this study, we investigated the effect of interfacial alumina on TiN/HfZrO2(HZO)/TiN and found that this layer helps to increase the MW (3.8 V). This is due to the formation of an in plane tensile stress during annealing process. This stress increases the volume fraction of the o-phase in HZO, achieving a wake-free behavior with
$2\text{Pr}=35\text{uC}/\text{cm}2$
in the pristine state. In addition, insertation of AlOx reduces the leakage current by one order, maintains the polarization charge, reducing the risk of charge diffusion into HZO. Sufficient polarization charge also improves the polarization switching speed, and we obtain a gain of 75% to 700% under operating voltage less than 1.5V.