Improved Switching behaviors of MFM Capacitor with Reduced Ec and Enhanced Pr-V Linearity by Using La-Al co-doped HfO2 Ferroelectric layer

By using supercycle co-doping ALD technique, HfLaAlO ferroelectric layers with various Hf: La: Al ratios are demonstrated in Metal-Ferroelectric-Metal (MFM) structure. The significantly improved switching behaviors are achieved in the MFM with 10nm HfLaAlO layer including: 1) Low coercive voltage (V
c
) below 1V; 2) Enhanced linearity of remanent polarization (P
r
) versus write voltage; 3) High endurance over 10
⁸
cycles. The achieved ferroelectric behaviors are beneficial for memory and computing applications.