High Performance Ge FinFET CMOS Invertor with $\mathrm{I}_{\text{ON}}=2.0\ \text{mA}/\mu\mathrm{m}$ at $\mathrm{V}_{\text{OV}}=1\mathrm{V}, \mathrm{S}.\mathrm{S}.=64\ \text{mV}/\text{dec},\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$, and $\text{Voltage}\ \text{Gain}=90\ \mathrm{V}/\mathrm{V}$ by Using High Pressure Supercritical Fluid Hydroxide Oxidation

A high performance Ge FinFET CMOS invertor with
$\mathrm{I}_{\text{ON}}=2\quad \text{mA}/\mu\mathrm{m}$
at
$\mathrm{V}_{\text{OV}}\ =1\mathrm{V},\quad \mathrm{S}.\mathrm{S}.=64\quad \text{mV}/\text{dec}, \mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}=2.5\times 10^{6}$
, and voltage gain=90 V/V is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.