Single-Electron Charge Sensor Self-Aligned to a Quantum Dot Array by Double-Gate Patterning Process for a Large-Scale Silicon Quantum Computer

Towards realization of a practical silicon-based quantum computer, we have integrated a charge sensor together with a quantum dot array amenable to large-scale integration by self-aligned double-gate patterning process. We tuned the charge sensor fabricated using this patterning process into a sensitive condition by examining the deviation and time-differentiation of the current as well as the gate voltage dependence. Consequently, we could successfully detect electron tunneling events and adjust electron tunneling time in a large-scale quantum dot array.