The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf0.5Zr0.5O2 Ferroelectric Capacitor

The measurement of ferroelectric (FE) polarization switching time was known to be strongly related with RC delay, but this phenomenon has not been fully understood, as several kinds of RC effects may be involved extrinsically and/or intrinsically. In this work, by carefully excluding the extrinsic RC charging effects before and in polarization switching, we experimentally and theoretically demonstrate an intrinsic RC effect coupled in polarization switching dynamics of Hf0.5Zr0.5O2 (HZO) FE capacitor. We found that such an intrinsic RC effect not only dominantly determine the switching time under high electric field but also significantly affect it under low field. And, a mechanism is proposed that a RC re-charging is coupled with each domain flipping in multiple domain FE system, so that the switching time is unavoidably and intrinsically affected by this coupling effect. Thus, our results provide critical messages to the speed evaluation and integrated circuit design of FE devices.