Impact on Radiation Robustness of Gate Mapping in FinFET Circuits under Work-function Fluctuation

Single Event Transient (SET) faults are more notable every day at Earth applications. Even considering FinFET technology, the effects are not negligible. A circuit-level evaluation of radiation effects must consider each internal node of the cells, input vectors, particle type, and pulse width derived from the particle collision to determine the sensibility of the circuit under evaluation. Moreover, circuit characterization is time-consuming, involving many electrical simulations to reach an appropriate precision, mainly considering together with the process variability effects. This work evaluates how process variability and gate mapping impacts the radiation robustness on circuits composed by multigate devices in 7 nm FinFET technology. Firstly, the NAND2 and NOR2 gates are evaluated at nominal conditions and considering the process variability impact on the radiation sensitivity. After that, three different topologies of the same circuit are analyzed, showing that even when considering process variability, the circuit's robustness is highly dependent on its output gates and that the most sensitive part of a circuit may vary given process variability. Results also show that the
$\mathbf{LET}_{th}$
value may vary by order of magnitude due to the work-function fluctuation of NMOS and PMOS devices.