A Fully Integrated W-Band Four-Channel Silicon-Based Radiometer Array in 65-nm CMOS

This paper presents a fully integrated W-band multi-channel silicon-based radiometer array in a 65-nm CMOS process. Four channels are integrated to achieve higher resolution and sensitivity. A single channel consists of low noise amplifier (LNA), detector, and analog baseband (ABB), respectively. The four-stage LNA achieves a power gain of 29.9dB, a minimum noise figure (NF) of 5.0dB over the band of interest. The detector achieves responsivity of 2.34 kV/W and 23.9
$\mathbf{pW}/\sqrt{\text{Hz}}$
noise equivalent power (NEP). The radiometer achieves a responsivity of 42293 MV/W, an NEP of 0.21
$\mathbf{fW}/\sqrt{\text{Hz}}$
, and a temperature resolution (NETD) of 0.226 K with a 1 ms integration time. The total power consumption is 254.6 mW.