Study of CsPbBr3 Perovskite Light-Emitting Diodes with PEDOT:PSS-MAPbBr3 QDs Complex Hole Transport Layer

This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr
3
quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr
3
PeLEDs) structure. The MAPbBr
3
QDs used MAPbBr
3
bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr
3
PeLEDs with PEDOT:PSS-MAPbBr
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QDs complexe HTL exhibited the better performance, to compare the CsPbBr
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PeLEDs with PEDOT:PSS-MAPbBr
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QDs complexe HTL, owing to the MAPbBr
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QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr
3
active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr
3
PeLEDs with PEDOT:PSS-MAPbBr
3
QDs complex hole transport layer were 10810 cd/m
²
and 0.34% at an applied voltage of 5.5 V, respectively.