Exploring Next-Generation GaN Power Devices with Ferroelectric Charge Trap Gate Stack Technology for Normally-OFF Operations

In light of the escalating global energy consumption and the concomitant demand for sustainable energy, optimizing energy efficiency has emerged as a crucial goal for advancing next-generation power-switching devices applications. As the quest for high-power density, compactness, and cost-effectiveness of devices persists in future power electronics applications, conventional Si-based devices are progressively encountering their physical boundaries. Considerable research and resources have been directed towards integrating renewable resources into electrical power conversion systems with optimal efficiency. Consequently, the replacement of traditional power systems with wide-bandgap semiconductors has emerged as a highly sought-after and challenging topic.