Hydrogen Termination Effect on SiO2/Si Interface State Defects of Silicon Hydride and Hydrocarbon Hybrid-Molecular-Ion-Implanted Silicon Epitaxial Wafer

In recent years, a three-dimensional stacked CMOS image sensor (3D-CIS) has been adopted for high performance. In 3D-CIS, the pixel and the pixel data processing function are fabricated on separate wafers, and the wafers are bonded by Cu-Cu hybrid bonding or Cu through-silicon via (Cu TSV) [1–3].However, it may cause Cu contamination if the barrier layer in the Cuinter connect is insufficient. In addition, deep trench isolation (DTI) isused in the isolation region with the aim of reducing cross talk (mixed colors) with adjacent pixels. In particular, the SiO
2
/Si interface state forms a deep energy level in the silicon band gap and functions as a generation-recombination center (G-R center) of carriers. Since it is well known that this G-R center greatly affects the electrical characteristics of CMOS image sensors, the reduction of interface state density (D
it
) atSiO
2
/Si is an important technical issue [4–10].