Abstract:
In this paper a temperature measurement method which is already used for Si-IGBTs is adapted to commercially available GaN HEMTs. This method is based on a temperature de...Show MoreMetadata
Abstract:
In this paper a temperature measurement method which is already used for Si-IGBTs is adapted to commercially available GaN HEMTs. This method is based on a temperature dependency of the internal gate resistance and its impact on the gate current peak during turn on transition.
Date of Conference: 09-11 May 2023
Date Added to IEEE Xplore: 04 July 2023
Print ISBN:978-3-8007-6091-6
