Evaluation of Next Generation MV SiC Power Modules

Improvements in Silicon Carbide (SiC) technology have led to the development of medium-voltage MOSFET modules with increased edge-rate and switching-frequency capabilities compared to their Silicon (Si) counterparts. However, systems that leverage medium-voltage SiC modules incur additional challenges regarding energy storage, metrology, insulation coordination, and electromagnetic interference. This paper evaluates the performance of a next-generation 3.3 kV SiC multi-chip power module and presents a modular double-pulse test system for evaluating its switching characteristics. The SiC module is compared against a similarly packaged 3.3 kV Si IGBT power module to evaluate the performance improvements that SiC provides for medium-voltage applications.