W-Band Cavity-backed Folded-slot Antenna Using GaAs Integrated Passive Device Technology

A W-band cavity-backed folded-slot antenna based on GaAs integrated passive device technology is proposed in this paper for the first time. A via-cavity is formed to produce TE
120
mode resonance and suppress surface waves, and an offset folded slot is designed to match the high impedance of the cavity. The simulated and measured
$\mathbf{S}_{\mathbf{11}}$
and the simulated radiation patterns are presented, which demonstrate that the antenna can operate from 97.8 GHz to 98.6 GHz with a maximum gain of 2.5 dBi while consuming a small area of only
$\mathbf{0.84}\mathbf{mm}\times \mathbf{1.325}\mathbf{mm}$
. The proposed antenna is suitable for system-on-chip millimeter-wave applications where front-end modules and the antenna are built on the same chip for minimal signal transfer loss.