Dit Extraction of Nano-node HK/MG nMOSFETs Treated with DPN Process under Diverse Nitrogen Concentration

High concentration of nitrogen in plasma treatment is beneficial to the repair performance of high-k gate dielectric, but the integrity of the channel surface may be slightly damaged, causing the amount of interface-state density grown. Using capacitance-voltage, sub-threshold swing, and threshold voltage measurement, the tangle of interface state resources is decoupled and the relationship among the interface state, threshold voltage, and drive current is clearly demonstrated.