Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

In this work, we exploit a 2TnC ferroelectric random access memory (FeRAM) cell design to realize the quasi-nondestructive readout (QNRO) of ferroelectric polarization (
${P}_{\text{FE}}$
) in a capacitor, which can relax the endurance requirement of the ferroelectric thin film and exploits the benefits of both FeRAM and ferroelectric FET (FeFET). We demonstrate that: i) QNRO sensing of
${P}_{\text{FE}}$
is conducted successfully in experiment with a ON/OFF ratio (
${I}_{\text{ON}}$
/
${I}_{\text{OFF}}$
) > 103,
${I}_{\text{ON}}$

$ > 10~\mu \text{A}$
, and read endurance > 106 cycles, which can relax the FeRAM endurance requirement by 10
$^{\mathrm{ 6}}\text{x}$
; ii) optimization of the cell performance can be realized by tuning the metal-ferroelectric-metal capacitor (MFM) capacitor to read transistor area ratio and read transistor threshold voltage (
${V}_{\text{TH}}$
); iii) the 2TnC cell structure is 3D-compatible, enabling integration of highly dense memory solution; iv) the 2TnC cell structure also enables compute-in-memory (CIM) applications of FeRAM, which has not been widely explored. With this technology, storage and memory-centric computing can be enabled.