Device-Level Thermal Management in Multifin SOI-FinFET Through Fin Pitch Design Employing Cooperative Game Theory

Cooperative game theory (CGT) was applied for fin pitch design in a multifin (MF)-FinFET, and the approach was found fruitful to reduce the self-heating effect (SHE) considerably. Individual fin contribution in MF-FinFET was numerically estimated within the framework of CGT using postprocessed results obtained from a calibrated special technology computer aided design (TCAD) simulation paradigm which was engaged to determine SHE due to various fin combinations in a 14-nm five fin reference silicon-on-insulator (SOI)-FinFET. Fin contributions to SHE were further employed for fin pitch optimization for better thermal management. Furthermore, area constraint had been accounted in the same optimization rule. The scheme was found weakly sensitive to allowable process variation (lithography pitch); however, it strictly remained SHE bias and device contact geometry independent. Electrical characteristics of reference MF-FinFET were found to be well preserved even under this fin pitch optimization